机读格式显示(MARC)

• 000 01199cam 2200337 a 4500

• 000 1000102534

• 001 0000325568

• 005 20080326103514.0

• 008 831019s1984 njua b 000 0 eng

• 010 __ |a 83022132 //r942

• 020 __ |a 081550974X : |c CNY2.20

• 040 __ |a DLC |c DLC |d DLC

• 050 00 |a TK7876 |b .A3 1984

• 082 00 |a 621.381/33 |2 19

• 090 __ |a TN304.2/ASM

• 093 __ |a TN304.2 |2 4

• 099 __ |a CAL 022000387259

• 245 00 |a Advanced III-V semiconductor materials technology assessment / |c edited by M. Nowogrodzki.

• 246 3_ |a Advanced three-five semiconductor materials technology assessment

• 246 3_ |a Advanced 3-5 semiconductor materials technology assessment

• 260 __ |a Park Ridge, N.J., USA : |b Noyes Publications, |c c1984.

• 300 __ |a xvi, 220 p. : |b ill. ; |c 25 cm.

• 504 __ |a Includes bibliographical references.

• 650 _0 |a Microwave devices.

• 650 _0 |a Gallium arsenide semiconductors.

• 650 _0 |a Microwave transistors.

• 700 1_ |a Nowogrodzki, M.

• 901 __022008001252

• 905 __ |a CAU |f TN304.2/ASM |b E0274434

• 907 __ |a CAU |f TN304.2/ASM |b E0274434

• 999 __ |t C |A gypx |a 20080326 10:29:51 |I gypx |i 20080326 10:35:14 |G wzhlc |g 20091230 09:31:0