机读格式显示(MARC)

• 000 01000cam 2200289 a 4500

• 000 1000082637

• 001 0000306299

• 005 20070330150719.0

• 008 890331s1990 nyua b 001 0 eng

• 010 __ |a 89008017

• 020 __ |a 0070541205 : |c CNY30.00

• 040 __ |a DLC |c DLC |d DLC

• 050 00 |a TK7871.86 |b .R68 1990

• 090 __ |a TN31/RDJ

• 093 __ |a TN31 |2 4

• 099 __ |a CAL 022000348641

• 100 1_ |a Roulston, David J.

• 245 10 |a Bipolar semiconductor devices / |c David J. Roulston.

• 260 __ |a New York : |b McGraw-Hill, |c c1990.

• 300 __ |a xxi, 422 p. : |b ill. ; |c 25 cm.

• 440 _0 |a McGraw-Hill series in electrical engineering. |p Electronics and electronic circuits

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Diodes, Semiconductor |x Design and construction.

• 901 __022007001335

• 905 __ |a CAU |f TN31/RDJ |b E0213528(or.)

• 907 __ |a CAU |f TN31/RDJ |b E0213528(or.)

• 999 __ |t C |A gxr |a 20070330 15:04:34 |I gxr |i 20070330 15:07:19 |G wzhlc |g 20070508 17:30:5